TEMPERATURE DEPENDENCE OF THE STRAIN SENSITIVITY OF SILICON COPPENSED WITH MANGANESE
Ключевые слова:
Strain sensitivity, silicon, manganese concentration, temperature, semiconductors, deep levels, strain gauge effect, strain potential, compensated semiconductorsАннотация
In this paper, the strain gauge sensitivity of compensated silicon doped with manganese Si was investigated. ⟨Mn⟩, depending on the concentration of manganese in the range 1012 cm-3 to 1015 cm-3 at different temperatures. Mathematical modeling was performed, including calculations and plotting of graphs demonstrating the dependence of strain sensitivity on manganese concentration and temperature.
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